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Advance Technical Information
TrenchMV TM
IXTL2x200N085T
V DSS = 85 V
I D25
Power MOSFETs
Common-Gate Pair
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
D
R G
R G
D
= 2x112 A
R DS(on) ≤ 6.0 m Ω
ISOPLUS i5-Pak TM (IXTL)
S
G
S
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSM
I D25
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
Transient
T C = 25 ° C
85
85
± 20
112
V
V
V
A
(Combined die total = 224 A)
I LRMS
Package Current Limit, RMS
75
A
(Combined die total = 150 A)
I DM
T C = 25 ° C, pulse width limited by T JM
540
A
Isolated back
surface
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 Ω
25
1.0
3
A
J
V/ns
D
S
G
S
G = Gate
S = Source
D
D = Drain
P D
T C = 25 ° C
150
W
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
T L
T SOLD
V ISOL
F C
Weight
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I ISOL < 1 mA, RMS
Mounting force
300
260
2500
20..120/4.5..25
9
° C
° C
V
N/lb.
g
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications
Automotive
BV DSS
V GS(th)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
85
2.0
4.0
V
V
- Motor Drives
- 42V Power Bus
- ABS Systems
I GSS
V GS = ± 20 V, V DS = 0 V
± 200 nA
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
I DSS
V DS = V DSS
V GS = 0 V
T J = 150 ° C
5 μ A
250 μ A
Systems
High Current Switching
R DS(on)
V GS = 10 V, I D = 50 A, Notes 1, 2
6.0 m Ω
Applications
All ratings and parametric values are per each MOSFET die unless otherwise specified.
DS99751(01/07)
? 2007 IXYS CORPORATION All rights reserved
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